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Friday, April 19 • 11:35am - 11:50am
Transport Properties of a Germanium/Silicon Nanowire

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We present transport measurements of a germanium/silicon nanowire device in a dilution refrigerator with an electron temperature of ~100 mK. Using a lock-in measurement technique, we are able to observe excited states in the Coulomb-blockade regime of a single quantum dot created in the nanowire. In addition, we observe double quantum dot behavior in the nanowire. Germanium/silicon nanowires contain relatively low nuclear spin densities, making them promising candidates for spin qubits.

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Friday April 19, 2013 11:35am - 11:50am EDT
MBH 216
  Oral

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